IRF6728MPBF mosfet equivalent, power mosfet.
rce Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1 2.3V 0.1 0.1 1
2.3V
≤60μs PULSE WIDTH
Tj = 25°C 1 100 0.1 1 10
≤60μs PULSE WIDTH
T.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET packag.
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